Elastic wave device and electronic device using the same

ABSTRACT

An elastic wave device has the following elements: a piezoelectric substrate; an inter-digital transducer (IDT) electrode disposed on the piezoelectric substrate; internal electrodes disposed above the piezoelectric substrate and electrically connected to the IDT electrode; side walls disposed above the internal electrodes surrounding the IDT electrode; a cover disposed above the side walls so as to cover a space above the IDT electrode; an electrode base layer disposed on the internal electrodes outside the side walls; and connection electrodes disposed on the electrode base layer. Each connection electrode has a first connection electrode disposed on the electrode base layer, and a second connection electrode disposed on the first connection electrode. The horizontal sectional shape of the second connection electrode is non-circular.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an elastic wave device and anelectronic device using the elastic wave device, such as a portabletelephone.

2. Background Art

A conventional elastic wave device is described with reference to theaccompanying drawing. FIG. 14 is a sectional schematic view of aconventional elastic wave device.

Conventional elastic wave device 101 has piezoelectric substrate 102,inter-digital transducer (IDT) electrode 103, internal electrodes 104,external electrodes 111, side walls 105, cover 107, insulator 110, andconnection electrodes 112.

IDT electrode 103 is disposed on piezoelectric substrate 102. Internalelectrodes 104 are disposed on piezoelectric substrate 102 andelectrically connected to IDT electrode 103. External electrodes 111 aredisposed on insulator 110 and connected to external circuits. Connectionelectrodes 112 are formed on internal electrodes 104 via electrode baselayer 109. Connection electrodes 112 are disposed so as to penetratethrough insulator 110, and electrically connect external electrodes 111and internal electrodes 104 via electrode base layer 109.

Side walls 105 are disposed on internal electrodes 104, on the peripheryof IDT electrode 103. Cover 107 is disposed on side walls 105 viaadhesive layer 106 so as to cover space 108 above IDT electrode 103.

Further, elastic wave device 101 has cover base layer 113 on cover 107,and cover reinforcing layer 114 on cover base layer 113. This structurereinforces cover 107.

Connection electrodes 112 disposed on the top side of electrode coverlayer 109 are formed by two electrolytic plating treatments. Each ofconnection electrodes 112 has first connection electrode 112 a formed bya first electrolytic plating treatment and second connection electrode112 b formed by a second electrolytic plating treatment, on the top sideof electrode base layer 109. The horizontal sectional shape of secondconnection electrode 112 b is circular.

In forming second connection electrode 112 b, a photosensitive resist isformed on the top surface of first connection electrodes 112 a and theirperipheries before the second electrolytic plating treatment. Next, acircular mask is disposed on the top side of this resist in the topsurface portion of each of first connection electrodes 112 a, and thephotosensitive resist is irradiated with light from the top surface ofthe mask. Thereby, the resist on the periphery of the mask is hardened.Next, the device is immersed in a developing solution so that the partof the resist under the mask is dissolved and removed. Thereby, anopening whose horizontal sectional shape is circular is formed.Thereafter, the second electrolytic plating treatment is performed, sothat second connection electrode 112 b can be formed in this opening.

When the photosensitive resist is irradiated with light from the topsurface of the mask, the light passes through the photosensitive resistand radiates to the top surface of first connection electrode 112 a. Theradiation light is reflected by asperities on the top surface of firstconnection electrode 112 a, and the reflected light radiates to the partof the resist under the mask.

The part of the resist under the circular mask is a circular cylinderwhose horizontal sectional shape is circular. The wall surface of theperipheral edge of the circular cylinder serves as a light source thatfurther reflects the light that has been reflected by the asperities onthe top surface of first connection electrode 112 a. Thus, the lightreflected by the wall surface of the circular cylinder is concentratedat the center of the circular horizontal section and forms a convergingaxis along the vertical axis in the center of the circular cylinder.

For this reason, the photosensitive resist in the vicinity of theconverging axis is hardened by the energy of the light concentrated onthe converging axis, thus forming a resist block. When the device isimmersed in a developing solution thereafter so that the part of theresist under the mask is dissolved and an opening whose horizontalsection is circular is formed, the resist block formed in the vicinityof the conversing axis does not dissolve and remains in the opening.

As a result, the reliability of second connection electrode 112 b to beformed in the opening by the second electrolytic plating treatmentdegrades, and thus the elastic wave device has a poor yield (seeInternational Publication No. 2006/106831, for example).

SUMMARY OF THE INVENTION

The elastic wave device of the present invention includes the followingelements: a piezoelectric substrate, an inter-digital transducer (IDT)electrode, internal electrodes, side walls, a cover, an electrode baselayer, and connection electrodes. The IDT electrode is disposed on thepiezoelectric substrate. The internal electrodes are disposed above thepiezoelectric substrate and electrically connected to the IDT electrode.The side walls are disposed above the internal electrodes, surroundingthe IDT electrode. The cover is disposed above the side walls so as tocover a space above the IDT electrode. The electrode base layer isdisposed on the internal electrodes outside the side walls. Theconnection electrodes are disposed on the electrode base layer. Further,each of the connection electrodes has a first connection electrodedisposed on the electrode base layer, and a second connection electrodedisposed on the first connection electrode. The horizontal sectionalshape of the second connection electrode is non-circular.

In the elastic wave device of the present invention, the horizontalsectional shape of the second connection electrode is non-circular.Thus, when a photosensitive resist is hardened by irradiation of light,this shape can prevent the formation of a photosensitive resist block,which is caused by concentration of reflected light on a convergingaxis, in the portion where the second connection electrode is to beformed thereafter. This can improve the reliability of the formation ofthe second connection electrode and the yield of the elastic wavedevice.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a sectional schematic view of an elastic wave device inaccordance with a first exemplary embodiment of the present invention.

FIG. 2A through FIG. 2D are diagrams each showing a sectional shape ofsecond connection electrodes in accordance with the first exemplaryembodiment.

FIG. 3A through FIG. 3C, FIG. 4A through FIG. 4C, and FIG. 5A throughFIG. 5C are diagrams each showing a manufacturing process of the elasticwave device in accordance with the first exemplary embodiment.

FIG. 6 is a sectional schematic view of an elastic wave device inaccordance with a second exemplary embodiment of the present invention.

FIG. 7 is a sectional schematic view showing another example of theelastic wave device in accordance with the second exemplary embodiment.

FIG. 8A through FIG. 8C, FIG. 9A through FIG. 9C, and FIG. 10A throughFIG. 10C are diagrams each showing a manufacturing process of theelastic wave device in accordance with the second exemplary embodiment.

FIG. 11 is a sectional schematic view showing another example of theelastic wave device in accordance with the second exemplary embodiment.

FIG. 12 is a top perspective view showing a pattern arrangement ofinternal electrodes, side walls, a cover, and an inorganic insulatingfilm in an elastic wave filter in accordance with the second exemplaryembodiment.

FIG. 13 is a block diagram showing a configuration of an electronicdevice in accordance with the exemplary embodiments of the presentinvention.

FIG. 14 is a sectional schematic view of a conventional elastic wavedevice.

DETAILED DESCRIPTION OF THE INVENTION First Exemplary Embodiment

Hereinafter, an elastic wave device in accordance with the firstexemplary embodiment of the present invention is described withreference to the accompanying drawings.

FIG. 1 is a sectional schematic view of an elastic wave device inaccordance with the first exemplary embodiment of the present invention.

Elastic wave device 1 is a chip size package device. Elastic wave device1 has piezoelectric substrate 2, inter-digital transducer (IDT)electrode 3 disposed on the top surface (principal surface) ofpiezoelectric substrate 2, and insulator 10 formed on piezoelectricsubstrate 2 so as to cover IDT electrode 3 so that IDT electrode 3 isprotected from an external environment.

Elastic wave device 1 further has internal electrodes 4, side walls 5,cover 7, adhesive layer 6, cover base layer 13, cover reinforcing layer14, electrode base layer 9, external electrodes 11 and connectionelectrodes 12.

Piezoelectric substrate 2 includes a single-crystal piezoelectric bodyapproximately 100 to 350 μm in thickness. Examples of the material ofpiezoelectric substrate 2 include crystal, lithium tantalate, lithiumniobate, and potassium niobate.

IDT electrode 3 is a comb-shaped electrode approximately 0.1 to 0.5 μmin thickness. Examples of the material of IDT electrode 3 include ametal single substance of aluminum, copper, silver, gold, titanium,tungsten, platinum, chromium, or molybdenum, alloys predominantlycomposed of these substances, and a laminate of these metals.

Internal electrodes 4 are disposed on piezoelectric substrate 2 andelectrically connected to IDT electrode 3. Internal electrodes 4 areconductors for electrically connecting IDT electrode 3 and externalelectrodes 11. Examples of the material of internal electrode 4 includea metal single substance of aluminum, copper, or silver, alloyspredominantly composed of these substances, and a laminate of thesemetals.

Side walls 5 are disposed on the top surfaces of internal electrodes 4.Each of side walls 5 is a wall approximately 5 to 15 μm in height thatsurrounds at least part of the periphery of IDT electrode 3. As thematerial of side wall 5, resin is used because the resin can be formedinto a predetermined shape easily.

Cover 7 is disposed on side walls 5 so as to cover space 8 above IDTelectrode 3. Cover 7 is a top plate approximately 1 to 10 μm inthickness that is held by adhesion to the top portions of side walls 5via adhesive layer 6. Cover 7 houses IDT electrode 3, with piezoelectricsubstrate 2 and side walls 5. Since metal has a high mechanical strengthand electrical conductivity, use of metal as the material of cover 7allows the control of the electric potential of cover 7. Use of copperas the material of cover 7 can make the coefficient of linear expansionof the cover substantially equal to that of single-crystal piezoelectricsubstrate 2.

Adhesive layer 6 is disposed between cover 7 and side walls 5. Adhesivelayer 6 is made of an adhesive agent approximately 1 to 10 μm inthickness. Adhesive layer 6 is made of a material that has an adhesionforce to insulator 10 larger than the adhesion force of side walls 5 toinsulator 10 per unit area. Adhesive layer 6 contains resin, such asepoxy resin, polyphenylene resin, and butadiene resin, or mixed resin ofthese materials.

In this specification, space 8 refers to a region surrounded bypiezoelectric substrate 2, side walls 5 and cover 7. Space 8 is hermeticand houses IDT electrode 3 inside thereof. Space 8 may be filled withnormal-pressure air. However, sealing the space under a reduced pressurecan prevent corrosion of IDT electrode 3.

Cover reinforcing layer 14 contains a plating metal, and is disposed oncover 7 via cover base layer 13 so as to improve the mechanical strengthof cover 7. Cover reinforcing layer 14 is a layer approximately 20 to 40μm in thickness that is formed on the top surface of cover base layer 13by electrolytic plating treatment. Examples of the material of coverreinforcing layer 14 include a metal single substance of copper, gold,silver, platinum, or nickel, and alloys predominantly composed of thesesubstances. Use of copper as cover reinforcing layer 14 can provide ahigh mechanical strength and make the coefficient of linear expansion ofthe layer matched to that of piezoelectric substrate 2.

Cover base layer 13 is a metal thin film formed on cover 7, and servesas a base for electrolytic plating when cover reinforcing layer 14 isformed. Examples of the material of cover base layer 13 include a metalsingle substance of titanium, copper, nickel, chromium, or magnesium,and alloys predominantly composed of these substances. Especially,titanium has high adhesion, and thus is preferable as the material ofcover base layer 13. When copper is disposed on titanium to form atwo-layer structure of cover base layer 13, cover reinforcing layer 14is easily formed.

Insulator 10 is formed on piezoelectric substrate 2 so as to covercover-reinforcing layer 14. By covering the entire principal surface ofpiezoelectric substrate 2, insulator 10 functions to protect IDTelectrode 3 from a mechanical shock, for example. Use of thermosettingresin as the material of insulator 10 can provide excellenthandleability. It is preferable in terms of heat resistance andhermeticity to use epoxy resin as the material of insulator 10. It ismore preferable that the epoxy resin contains inorganic filler becausethe inorganic filler can reduce the coefficient of linear expansion.Examples of the material of the inorganic filler include alumina powder,silicon dioxide powder, and magnesium oxide powder. The material of theinorganic filler is not limited to these powders, and various inorganicmaterials can be used.

Electrode base layer 9 is disposed on the top surfaces of internalelectrodes 4, on the opposite sides of space 8 with respect to sidewalls 5, i.e. on the outer surfaces of side walls 5, and in part of thetop surfaces of side walls 5. Electrode base layer 9 is a metal thinfilm. Examples of the material of electrode base layer 9 include a metalsingle substance of titanium, copper, nickel, chromium, or magnesium,and alloys predominantly composed of these substances that havesolubility in plating solution lower than that of internal electrode 4.Especially, titanium has high adhesion, and thus is preferable as thematerial of electrode base layer 9. When copper is disposed on titaniumto form a two-layer structure of electrode base layer 9, connectionelectrodes 12 to be described later are easily formed.

Each of connection electrodes 12 is an electrode formed by electrolyticplating treatment on internal electrode 4 and side wall 5 via electrodebase layer 9. Connection electrode 12 contains a plating metal, and isdisposed on electrode base layer 9 so as to penetrate through insulator10. Thus, the connection electrode electrically connects externalelectrode 11 and IDT electrode 3.

Connection electrode 12 is formed by two electrolytic platingtreatments. In this specification, the part formed by a firstelectrolytic plating treatment is denoted as first connection electrode12 a, and the part formed by a second electrolytic plating treatment assecond connection electrode 12 b. The horizontal sectional shape offirst connection electrode 12 a formed by the first electrolytic platingtreatment can be an optional shape. In this exemplary embodiment, thehorizontal sectional shape of second connection electrode 12 b formed bythe second electrolytic plating treatment is a non-circular shape.

Examples of the material of connection electrode 12 include a metalsingle substance of copper, gold, silver, platinum, or nickel, andalloys predominantly composed of these substances. Use of copper as thematerial of connection electrode 12 provides a high mechanical strengthand allows the coefficient of linear expansion of the electrode to bematched to that of piezoelectric substrate 2.

Each of external electrodes 11 is an electrode formed outside insulator10 and electrically connecting to connection electrode 12. Sinceinsulator 10 is formed between external electrodes 11 and side walls 5in this exemplary embodiment, external electrodes 11 are not in directcontact with side walls 5.

As described above, in elastic wave device 1 of this exemplaryembodiment, the horizontal section of second connection electrode 12 bof each connection electrode 12 has a non-circular shape. Thus, when aphotosensitive resist is hardened by irradiation of light, this shapecan inhibit the concentration of reflected light and the resultingincrease in the light energy in the vicinity of the conversing axis inthe portion where second connection electrode 12 b is to be formed bythe second electrolytic plating thereafter, which are caused when thehorizontal section has a circular shape. As a result, this shape canprevent the formation of a photosensitive resist block in the portionwhere second connection electrode 12 b is to be formed, and improve thereliability of the formation of second connection electrode 12 b and theyield of elastic wave device 1.

FIG. 2A through FIG. 2D are diagrams each showing a sectional shape ofsecond connection electrodes 12 b in accordance with the first exemplaryembodiment. FIG. 2A through FIG. 2D show sectional shapes taken on lines2A-2A (2B-2B, 2C-2C, and 2D-2D, respectively) of FIG. 1. The sectionalshape of second connection electrode 12 b is a non-circular shape. Here,the non-circular shape includes all the shapes other than the circularshape. For example, second connection electrode 12 b may have thefollowing sectional shapes: a quadrangular shape of FIG. 2A; anelliptical shape of FIG. 2B such that the ratio of the long axis to theshort axis is equal to or greater than 1.2; a polygonal shape of FIG. 2Csuch that the number of sides is equal to or smaller than 16 (ahexagonal shape in the example of FIG. 2C); and a shape of FIG. 2D thatincludes a straight part having a length ranging from 35 μm to 80 μminclusive in the peripheral edge thereof.

Especially a structure where the horizontal sectional shape of secondconnection electrode 12 b includes a straight part having a lengthranging from 35 μm to 80 μm inclusive in the peripheral edge thereof cancompletely prevent the formation of a photosensitive resist block in theportion where second connection electrode 12 b is to be formed, andconsiderably improve the yield of elastic wave device 1. The shape otherthan the straight part can be an optional shape, and is not limited tothe shape of FIG. 2D.

Next, hereinafter, a description is provided for a method formanufacturing elastic wave device 1 in accordance with the firstexemplary embodiment of the present invention.

FIG. 3A through FIG. 3C, FIG. 4A through FIG. 4C, and FIG. 5A throughFIG. 5C are diagrams each showing a manufacturing process of elasticwave device 1 in accordance with the first exemplary embodiment.

First, as shown in FIG. 3A, on the surface of piezoelectric substrate 2,a plurality of IDT electrodes 3 is sputtered and internal electrodes 4are deposited by a photolithography technique using a resist.

Next, as shown in FIG. 3B, photosensitive polyimide resin 16 is formedentirely on the principal surface of piezoelectric substrate 2.Polyimide resin 16 is formed by a film forming method, such as aspin-coating method, a dispensing method, and a screen-printing method.Polyimide resin 16 is formed so as to cover IDT electrodes 3 andinternal electrodes 4. Use of the spin-coating method to form polyimideresin 16 can provide a uniform film thickness.

Next, polyimide resin 16 is exposed to light from the top surface,developed, and thermo-set. Thereby, as shown in FIG. 3C, side walls 5surrounding IDT electrodes 3 can be formed. In this process, after sidewalls 5 are worked into a predetermined shape, the side walls aresubjected to heat treatment as necessary so that the setting of thematerial is promoted.

Next, as shown in FIG. 4A, metal foil 17 for forming cover 7 is bondedto the top surfaces of side walls 5 via adhesive agent 18. Then, byphotolithography using a resist (not shown), metal foil 17 is etchedinto a predetermined pattern shape. After the resist is removed,unnecessary portions of adhesive agent 18 are removed by dry etching.Thereby, as shown in FIG. 4B, a structure where cover 7 and adhesivelayer 6 cover space 8 above IDT electrode 3 can be obtained.

In the structure of FIG. 4B, preferably, cover 7 and adhesive layer 6 donot remain on the entire top surface of each side wall 5. That is,preferably, cover 7 and adhesive layer 6 are formed inside the outeredge of the top surface of side wall 5 as viewed from the top. This isintended to avoid the following problem. If cover 7 and adhesive layer 6protrude outwardly from the top surface of side wall 5 as viewed fromthe top, base layer 19 is difficult to adhere to the outer side surfaceof side wall 5 and the border portion between side wall 5 andpiezoelectric substrate 2 when base layer 19 is sputtered thereafter.

Next, as shown in FIG. 4C, base layer 19 that covers the top surfacesides of internal electrodes 4, side walls 5, and cover 7 is formed bysputtering. Then, a resist (not shown) is formed by a photolithographytechnique on the top surface of base layer 19, in the portions otherthan connection electrodes 12 and cover reinforcing layer 14 to beformed next by the electrolytic plating growth. In this base layer 19,the part formed on the top surface of cover 7 is cover base layer 13,and the part formed on the top surface of internal electrode 4 iselectrode base layer 9.

Next, as shown in FIG. 5A, a first electrolytic plating treatment isprovided on electrode base layer 9 so as to form first connectionelectrodes 12 a. At the same time, the electrolytic plating treatment isalso provided on the top surface of cover base layer 13 so as to formcover reinforcing layer 14.

Next, as shown in FIG. 5B, photosensitive resist 20 is disposed on thetop surfaces of first connection electrodes 12 a and the top surface ofcover reinforcing layer 14. On the top side of this resist 20 in theportions facing the top surfaces of first connection electrodes 12 a,masks 21 each having a non-circular horizontal sectional shape aredisposed. For example, the horizontal sectional shape of each mask 21can be an elliptical shape such that the ratio of the long axis to theshort axis is equal to or greater than 1.2, a polygonal shape such thatthe number of sides is equal to or smaller than 16, or a shape thatincludes a straight part having a length ranging from 35 μm to 80 μminclusive, as shown in FIG. 2A through FIG. 2D. The preferable length ofthe straight part is not dependent on the thickness of the resist.

Next, resist 20 is irradiated with light 22 from the top surface of eachmask 21, so that the portion of resist 20 other than the part under mask21 is hardened. With reference to FIG. 5B, part of light 22 passesthrough photosensitive resist 20 and radiates to the top surface offirst connection electrode 12 a, and is reflected by the asperities onthe top surface of first connection electrode 12 a. Then, the reflectedlight radiates to the portion of the resist on the periphery of mask 21(including the part right under the mask). Thus, resist wall surface 23can serve as a light source that further reflects the light that hasbeen reflected by the asperities on first connection electrode 12 a.

When the horizontal section of mask 21 has an elliptical shape such thatthe ratio of the long axis to the short axis is equal to or greater than1.2, the part of resist 20 right under mask 21 is a circular cylinderwhere the horizontal section has an elliptical shape. Therefore, thelight reflected by resist wall surface 23 is concentrated on twoseparate focal points. The light energy in each focal point is weakerthan the light energy concentrated on the center of a circle when thehorizontal section is circular. That is, even the total light energy ofthe reflected light passing through the respective focal points of theellipse does not reach the light energy capable of hardeningphotosensitive resist 20, and thus a resist block is not formed in thepart right under mask 21.

When the horizontal sectional shape of mask 21 is a polygon such thatthe number of sides is equal to or smaller than 16, the part of resist20 right under mask 21 is a polygonal cylinder where the horizontalsectional shape is a polygon such that the number of sides is equal toor smaller than 16. Thus, the light reflected by resist wall surface 23forms conversing points everywhere in the horizontal section, and thelight energy in each converging point is weaker than the light energyconcentrated on the center of a circle when the horizontal section iscircular. Therefore, even the total of the light that has been reflectedby the asperities on the top surface of first connection electrode 12 aand passes through the respective converging points does not producelight energy capable of hardening photosensitive resist 20, and thus aresist block is not formed in the part right under mask 21.

Further, the horizontal sectional shape of mask 21 may be a shape thatincludes a straight part having a length ranging from 35 μm to 80 μminclusive, or a shape having different distances from the center ofgravity to the periphery of the horizontal sectional shape. Also inthese cases, the light reflected by resist wall 23 does not producelight energy capable of hardening photosensitive resist 20, and thus aresist block is not formed in the part right under mask 21.

Next, the device having undergone the process up to FIG. 5B is immersedin a developing solution so that part of resist 20 having masks 21 onthe top side is dissolved and removed. As a result, as shown in FIG. 5C,in the part under each mask 21, opening 24 having a horizontal sectionalshape corresponding to the horizontal sectional shape of mask 21 isformed.

Next, by a second electrolytic plating treatment, second connectionelectrode 12 b is formed in each opening 24. The horizontal sectionalshape of the electrode is the same as the horizontal sectional shape ofmask 21.

The horizontal sectional area of second connection electrode 12 b issmaller than the horizontal sectional area of first connection electrode12 a.This structure allows second connection electrode 12 b to be formedon the top surface of first connection electrode 12 a with reliability,and improves the connection reliability of connection electrode 12, andthus the yield.

Next, the device is immersed and oscillated in a stripping solution, sothat the resist pattern is removed. Thereafter, while the top surface ofeach connection electrode 12 is exposed, insulator 10 that covers thestructure on the principal surface of piezoelectric substrate 2 isformed. Insulator 10 is formed by a printing method.

At last, external electrodes 11 to be electrically connected toconnection electrodes 12 are formed on the top surfaces of connectionelectrodes 12. Then, piezoelectric substrate 2 and insulator 10 aresimultaneously cut by dicing. Thereby, separate elastic wave device 1 asshown in FIG. 1 can be obtained from the collective substrate.

Elastic wave device 1 of this exemplary embodiment may be used infilters, such as a ladder type filter and a double mode SAW (DMS)filter. Further, using a filter that includes elastic wave devices 1, asemiconductor integrated circuit device connected to the filter, and areproducer connected to the semiconductor integrated circuit device, anelectronic device can be formed.

Second Exemplary Embodiment

Next, a description is provided for an elastic wave device in accordancewith the second exemplary embodiment of the present invention, withreference to the accompanying drawings.

FIG. 6 is a sectional schematic view of an elastic wave device inaccordance with the second exemplary embodiment of the presentinvention.

Elastic wave device 51 of FIG. 6 is a chip size package device. Elasticwave device 51 has piezoelectric substrate 52, inter-digital transducer(IDT) electrode 53, internal electrodes 54, side walls 55, cover 57,cover reinforcing layer 64, electrode base layer 59, external electrodes61, connection electrodes 62, insulator 60, and inorganic insulatingfilm 70.

Piezoelectric substrate 52 includes a single-crystal piezoelectric bodyapproximately 100 to 350 μm in thickness. Examples of the material ofpiezoelectric substrate 52 include crystal, lithium tantalate, lithiumniobate, and potassium niobate.

IDT electrode 53 is disposed on the top surface (principal surface) ofpiezoelectric substrate 52. IDT electrode 53 is a comb-shaped electrodeapproximately 0.1 to 0.5 μm in thickness. Examples of the material ofIDT electrode 53 include a metal single substance of aluminum, copper,silver, gold, titanium, tungsten, platinum, chromium, or molybdenum,alloys predominantly composed of these substances, and a laminate ofthese metals.

Internal electrodes 54 are disposed on piezoelectric substrate 52 andelectrically connected to IDT electrode 53. Internal electrodes 54 areconductors for electrically connecting IDT electrode 53 and externalelectrodes 61. Examples of the material of internal electrode 54 includea metal single substance of aluminum, copper, or silver, alloyspredominantly composed of these substances, and a laminate of thesemetals.

Side walls 55 are disposed on the periphery of IDT electrode 53, on thetop surface of piezoelectric substrate 52 or on the top surfaces ofinternal electrodes 54. Each of side walls 55 is a wall approximately 5to 15 μm in height that surrounds at least part of the periphery of IDTelectrode 53. As the material of side wall 55, resin is used because theresin can be formed into a predetermined shape easily. Especially whenphotosensitive resin is used as the material of side wall 55, side wall55 that allow a plurality of elastic wave devices 51 to be disposed onpiezoelectric substrate 52 can be formed into a desired shape at highprecision. Examples of the photosensitive resin include various resinmaterials having photosensitivity, such as photosensitive polyimideresin, photosensitive epoxy resin, and photosensitive acrylate resin.The photosensitive polyimide resin has a high glass transitiontemperature, and thus use of the photosensitive polyimide resin canenhance the reliability in a high-temperature environment.

Cover 57 is disposed on the top side of side walls 55 so as to coverspace 58 above IDT electrode 53. Cover 57 is a top plate held byadhesion to the top portions of side walls 55. The cover houses IDTelectrode 53 in inside space 58, with piezoelectric substrate 52 andside walls 55. Cover 57 is approximately 1 to 10 μm in thickness.

Adhesive layer 56 contains a material, such as epoxy resin, which has anadhesion force to insulator 60 per unit area larger than that of sidewalls 55. Adhesive layer 56 bonds cover 57 and side walls 55.

When resin is used as cover 57, it is preferable to use of an adhesivesheet containing a photosensitive resin. Such an adhesive sheet hascover 57 and adhesive layer 56 combined together, and is easily workedinto a predetermined shape. Examples of the photosensitive resin includevarious materials having photosensitivity, such as photosensitivepolyimide resin, photosensitive epoxy resin, and photosensitive acrylateresin. Since the photosensitive polyimide resin has a high glasstransition temperature, use of the photosensitive polyimide resin canenhance the reliability in a high-temperature environment.

When metal is used as cover 57, epoxy resin, polyphenylene resin,butadiene resin, or mixed resin of these resins can be used as adhesivelayer 56.

Since metal has a high mechanical strength and electrical conductivity,use of metal as cover 57 allows the control of the electric potential ofcover 57. Further, use of copper for cover 57 makes the coefficient oflinear expansion of the cover substantially equal to that ofsingle-crystal piezoelectric substrate 52.

Further, as cover 57, a foil type can be used. In this case, adhesivelayer 56 is preformed on cover 57, and bonded to the top portions ofside walls thereafter. This structure can provide higher handleabilityin manufacturing.

In this specification, space 58 refers to a region surrounded bypiezoelectric substrate 52, side walls 55, and cover 57. Space 58 ishermetic and houses IDT electrode 53 inside thereof. Space 58 may befilled with normal-pressure air. However, sealing the inside of space 58under a reduced pressure can prevent corrosion of IDT electrode 53.

Cover base layer 63 is a metal thin film formed on cover 57. Examples ofthe material of cover base layer 63 include a metal single substance oftitanium, copper, nickel, chromium, or magnesium, and alloyspredominantly composed of these substances. Use of titanium can enhanceadhesion. When copper is disposed on titanium to form a two-layerstructure of cover base layer 63, cover reinforcing layer 64 is easilyformed. Cover base layer 63 serves as the base for electrolytic platingfor forming cover reinforcing layer 64.

Cover reinforcing layer 64 contains a plating metal, and is disposed oncover 57 via cover base layer 63 so as to improve the mechanicalstrength of cover 57. Cover reinforcing layer 64 is a layerapproximately 20 to 40 μm in thickness that is formed on the top surfaceof cover base layer 63 by electrolytic plating treatment. Examples ofthe material of cover reinforcing layer 64 include a metal singlesubstance of copper, gold, silver, platinum, or nickel, and alloyspredominantly composed of these substances. Use of copper as thematerial of cover reinforcing layer 64 provides a high mechanicalstrength and allows the coefficient of linear expansion of the layer tobe matched to that of piezoelectric substrate 52.

Electrode base layer 59 is disposed on the top surfaces of internalelectrodes 54, on the opposite sides of space 58 with respect to sidewalls 55, i.e. on the outer surfaces of side walls 55, and in part ofthe top surfaces of side walls 55. Electrode base layer 59 is a metalthin film, and is formed outside of side walls 55 on internal electrodes54, i.e. on the outer side surfaces of side walls 55 on the oppositesides of space 58 with respect to side walls 55. Examples of thematerial of electrode base layer 59 include a metal single substance oftitanium, copper, nickel, chromium, or magnesium, and alloyspredominantly composed of these substances that have solubility inplating solution lower than that of internal electrode 54. Use oftitanium can enhance adhesion. When copper is disposed on titanium toform a two-layer structure of electrode base layer 59, connectionelectrodes 62 to be described later are easily formed.

Insulator 60 contains organic resin, and is formed on piezoelectricsubstrate 52 so as to cover IDT electrode 53 so that IDT electrode 53 isprotected from an external environment. Insulator 60 is formed so as tocover cover-reinforcing layer 64. Use of thermosetting resin as thematerial of insulator 60 can provide excellent handleability.Especially, epoxy resin is preferable in terms of heat resistance andhermeticity. Addition of inorganic filler to the epoxy resin can reducethe coefficient of linear expansion. Examples of the material of theinorganic filler include alumina powder, silicon dioxide powder, andmagnesium oxide powder. The material of the inorganic filler is notlimited to these powders, and various inorganic materials can be used.

External electrodes 61 are electrodes formed outside insulator 60 andelectrically connected to connection electrodes 62. Since insulator 60is formed between external electrodes 61 and side walls 55 in thisexemplary embodiment, external electrodes 61 are not in direct contactwith side walls 55.

Connection electrodes 62 contain a plating metal. Each of the connectionelectrodes is disposed on electrode base layer 59 so as to penetratethrough insulator 60 and electrically connects external electrode 61 andIDT electrode 53. Connection electrode 62 is an electrode formed oninternal electrode 54 via electrode base layer 59 by electrolyticplating treatment. Connection electrode 62 electrically connects tointernal electrode 54. Examples of the material of connection electrode62 include a metal single substance of copper, gold, silver, platinum,or nickel, and alloys predominantly composed of these substances. Use ofcopper as the material of connection electrode 62 provides a highmechanical strength and allows the coefficient of linear expansion ofthe electrode to be matched to that of piezoelectric substrate 52.

When connection electrode 62 is connected to an input/output terminal,connection electrode 62 is electrically insulated from cover 57, coverbase layer 63, and cover reinforcing layer 64 by the function ofinorganic insulating film 70 to be described later. On the other hand,when connection electrode 62 is connected to a ground terminal, theground potential can be stabilized by connecting connection electrode 62to cover 57, cover base layer 63, and cover reinforcing layer 64.

Elastic wave device 51 has inorganic insulating film 70 betweeninsulator 60 and cover 57 and between insulator 60 and side walls 55.Inorganic insulating film 70 is disposed at least in the border portionsbetween cover 57 and side walls 55, facing the side of insulator 60.Inorganic insulating film 70 is more difficult to permeate moisture thanorganic resin. Therefore, inorganic insulating film 70 is formed atleast in the border portions between side walls 55 and cover 57, betweeninsulator 60 and cover 57 and between insulator 60 and side walls 55.This structure prevents moisture from passing between cover 57 and sidewalls 55, and from entering into space 58 above IDT electrode 53. As aresult, this structure can improve the moisture resistance of elasticwave device 51 and prevent the deterioration of characteristics overtime caused by corrosion of IDT electrode 53.

As shown in FIG. 6, in elastic wave device 51, inorganic insulating film70 is also formed outside connection electrodes 62 (i.e. on the oppositesides of side walls 55 with respect to connection electrodes 62) betweeninsulator 60 and piezoelectric substrate 52. However, inorganicinsulating film 70 is not necessarily formed in these portions. Inelastic wave device 51, connection electrodes 62 and electrode baselayer 59 that are made of metal more difficult to permeate moisture thanorganic resin are disposed outside of side walls 55. This structure canprevent the entry of moisture between insulator 60 and piezoelectricsubstrate 52.

Inorganic insulating film 70 is a protective film approximately 1 μm to10 μm in thickness. For example, inorganic insulating film 70 is made ofa material including at least one of silicon dioxide (SiO₂), siliconnitride (SiN), aluminum oxide (Al₂O₃), aluminum nitride (AlN), andmagnesium oxide (MgO). For example, when insulator 60 contains inorganicfiller made of silicon dioxide and inorganic insulating film 70 is madeof silicon dioxide, the adhesion force between inorganic insulating film70 and insulator 60 can be improved. In this manner, when inorganicinsulating film 70 contains the same material as the inorganic fillercontained in insulator 60, the adhesion properties between inorganicinsulating film 70 and insulator 60 can be improved.

When cover 57 is made of metal, the moisture from the outside of thedevice is difficult to pass through cover 57, but passes throughadhesive layer 56 relatively easily. In this case, inorganic insulatingfilm 70 is not formed between cover 57 and insulator 60, and formedbetween adhesive layer 56 and insulator 60. This structure can inhibitthe entry of moisture through adhesive layer 56 into space 58 above IDTelectrode 53. When cover 57 is made of organic resin, inorganicinsulating film 70 is formed entirely between cover 57 and insulator 60.This structure can inhibit the entry of moisture through cover 57 intospace 58 above IDT electrode 53.

Inorganic insulating film 70 also serves to diffuse the heat generatedfrom IDT electrode 53 to the outside of the device. For example, whenside walls 55 are made of organic resin, inorganic insulating film 70has higher heat conductivity than side walls 55. Thus, the heatgenerated from IDT electrode 53 is conducted by inorganic insulatingfilm 70 and diffused to adjacent connection electrodes 62, for example.As a result, heat dissipation properties of elastic wave device 51 canbe improved.

Next, a description is provided for another structural example of theelastic wave device in accordance with the second exemplary embodimentof the present invention. FIG. 7 is a sectional schematic view showinganother example of the elastic wave device in accordance with the secondexemplary embodiment of the present invention.

Elastic wave device 71 of FIG. 7 is different from elastic wave device51 of FIG. 6 in that elastic wave device 71 has no connection electrodes62. Elastic wave device 71 has inorganic insulating film 70 betweeninsulator 60 and cover 57 and between insulator 60 and side walls 55,and further has inorganic insulating film 70 between piezoelectricsubstrate 52 and insulator 60. Also the structure of elastic wave device71 can prevent moisture from passing between cover 57 and side walls 55and between piezoelectric substrate 52 and insulator 60, and fromentering into space 58 above IDT electrode 53. Further, inorganicinsulating film 70 can improve heat dissipation properties.

Next, a description is provided for a method for manufacturing elasticwave device 51 in accordance with the second exemplary embodiment, withreference to the accompanying drawings.

FIG. 8A through FIG. 8C, FIG. 9A through FIG. 9C, and FIG. 10A throughFIG. 10C are diagrams each showing a manufacturing process of elasticwave device 51 in accordance with the second exemplary embodiment of thepresent invention.

First, as shown in FIG. 8A, on the surface of piezoelectric substrate52, a plurality of IDT electrodes 53 is sputtered and internalelectrodes 54 are deposited by a photolithography technique using aresist.

Next, as shown in FIG. 8B, photosensitive polyimide resin 66 is formedon piezoelectric substrate 52 by a film forming method, such as aspin-coating method, a dispensing method, and a screen-printing method.Polyimide resin 66 is formed on the entire principal surface ofpiezoelectric substrate 52 so as to cover IDT electrodes 53 and internalelectrodes 54. Use of the spin-coating method to form polyimide resin 66can provide a uniform film thickness.

Next, polyimide resin 66 is exposed to light from the top surface,developed, and thermo-set. Thereby, as shown in FIG. 8C, side walls 55surrounding IDT electrodes 53 can be formed. In this process, after sidewalls 55 are worked into a predetermined shape, the side walls aresubjected to heat treatment as necessary so that the setting of thematerial is promoted.

Next, as shown in FIG. 9A, metal foil 67 for forming cover 57 is bondedto the top surfaces of side walls 55 via adhesive agent 68. Then, byphotolithography using a resist (not shown), metal foil 67 is etchedinto a predetermined pattern shape and the resist is removed.Thereafter, unnecessary portions of adhesive agent 68 are removed by dryetching. Thereby, as shown in FIG. 9B, a structure where cover 57 andadhesive layer 56 cover space 58 above IDT electrode 53 can be obtained.

Preferably, cover 57 and adhesive layer 56 do not remain on the entiretop surface of each side wall 55. That is, preferably, cover 57 andadhesive layer 56 are formed inside the outer edge of the top surface ofside wall 55 as viewed from the top. This is intended to avoid thefollowing problem. If cover 57 and adhesive layer 56 protrude outwardlyfrom the top surface of side wall 55 as viewed from the top, a baselayer is difficult to adhere to the outer side surface of side wall 55and the border portion between side wall 55 and piezoelectric substrate52 when the base layer is sputtered thereafter.

Next, as shown in FIG. 9C, the base layer that covers the top surfacesides of internal electrodes 54, side walls 55, and cover 57 is formedby sputtering. Then, a resist (not shown) is formed by aphotolithography technique in the portions other than connectionelectrodes 62 and cover reinforcing layer 64 to be formed next by theelectrolytic plating growth on the top surface of the base layer formed.In this base layer, the part formed on the top surface of cover 57 iscover base layer 63, and the part formed on the top surface of internalelectrode 54 is electrode base layer 59.

Next, as shown in FIG. 10A, connection electrodes 62 are formed.Specifically, while a resist is formed in the portions where connectionelectrodes 62 are not to be formed on electrode base layer 59 on the topsurfaces of side walls 55, a first electrolytic plating treatment isprovided on the portions where connection electrodes 62 are to be formedon the top surface of electrode base layer 59. Thereby, part ofconnection electrodes 62 is formed. At the same time, the electrolyticplating treatment is also provided on the top surface of cover baselayer 63 so as to form cover reinforcing layer 64.

After the first electrolytic plating treatment, a resist is formed onthe top surface of cover reinforcing layer 64, and in the portions wherea second electrolytic plating treatment is not provided on the topsurfaces of connection electrodes 62 formed by the first electrolyticplating treatment. Thereafter, the second electrolytic plating treatmentis provided on part of connection electrodes 62. Thereby, the remainingportions of connection electrodes 62 are formed.

Next, the resist formed on the top surfaces of side walls 55 and theside surfaces of covers 57 is removed by a stripping solution and thebase layer is removed by etching.

Thereafter, as shown in FIG. 10B, a resist (not shown) is formed on thetop surfaces of connection electrodes 62 and cover reinforcing layer 64by a photolithography technique, and inorganic insulating film 70 madeof polysilazane is formed on the exposed top surfaces of side walls 55,side surfaces of cover 57, and top surface of piezoelectric substrate52. This polysilazane contains inorganic polymers whose basic unit is(SiH₂NH)—. When polysilazane is fired and thereafter changed to roomtemperature, polysilazane converts to a compact silicon dioxide film.

Next, the device is immersed and oscillated in a stripping solution, sothat the resist pattern is removed. At this time, polysilazane may bedeposited on the entire top surface of the device without a resistformed. In this case, as shown by elastic wave device 81 of FIG. 11,inorganic insulating film 70 is formed on the top surface of coverreinforcing layer 64 and the side surfaces of connection electrodes 62in the final form. FIG. 11 is a sectional schematic view showing anotherexample of the elastic wave device in accordance with the secondexemplary embodiment of the present invention. Also the structure ofelastic wave device 81 can prevent moisture from passing between cover57 and side walls 55 and between piezoelectric substrate 52 andinsulator 60, and from entering into space 58 above IDT electrode 53.Inorganic insulating film 70 can also improve heat dissipationproperties.

Next, as shown in FIG. 10C, while the top surface of each connectionelectrode 62 is exposed, insulator 60 that covers the top part ofinorganic insulating film 70 on the top surface of piezoelectricsubstrate 52 and the structure on the principal surface of piezoelectricsubstrate 52 is formed. Insulator 60 is formed by a printing method.

At last, external electrodes 61 to be electrically connected toconnection electrodes 62 are formed on the top surfaces of connectionelectrodes 62. Then, piezoelectric substrate 52 and insulator 60 aresimultaneously cut by dicing. Thereby, separate elastic wave devices 51are obtained from the collective substrate.

Next, a description is provided for a pattern arrangement of internalelectrodes 54, side walls 55, cover 57, and inorganic insulating film 70when elastic wave devices 51, 71, and 81 of the second exemplaryembodiment are used in an elastic wave filter, with reference to theaccompanying drawing.

FIG. 12 is a top perspective view showing a pattern arrangement ofinternal electrodes 54 a, 54 b, and 54 c, side walls 55, cover 57, andinorganic insulating film 70 in accordance with the second exemplaryembodiment of the present invention. In FIG. 12, cover reinforcing layer64, insulator 60, and connection electrodes 62 are omitted.

Elastic wave filter 32 using elastic wave devices 51, 71, and 81 is aladder type filter. Elastic wave filter 32 has two pad internalelectrodes 54 a, wiring internal electrodes 54 b, a plurality of seriesIDT electrodes 53 a, ground internal electrodes 54 c, and parallel IDTelectrodes 53 b on the surface of piezoelectric substrate 52.

Two pad internal electrodes 54 a are connected to input/output terminals(not shown). The plurality of series IDT electrodes 53 a isseries-connected between two pad internal electrodes 54 a via wiringinternal electrodes 54 b. Ground internal electrodes 54 c are connectedto ground terminals (not shown). Parallel IDT electrodes 53 b areconnected between ground internal electrodes 54 c and wiring internalelectrodes 54 b.

In the broken lines of FIG. 12, the inner broken line shows the positionof cover 57. Along this inner broken line, inorganic insulating film 70disposed on the side surfaces of cover 57 is present. Further, alsobetween the inner broken line and the outer broken line, inorganicinsulating film 70 disposed on the top surfaces of side walls 55 ispresent. Further, in the diagonally shaded portions along the outerperiphery of elastic wave filter 32, inorganic insulating film 70disposed between piezoelectric substrate 52 and insulator 60 (not shown)is present.

Inorganic insulating film 70 disposed between piezoelectric substrate 52and insulator 60 as shown in FIG. 12 prevents the entry of moisture fromthe outside of elastic wave devices 51, 71, and 81 into the inside ofthe devices. Inorganic insulating film 70 disposed in the borderportions between side walls 55 and covers 57 inhibits the entry ofmoisture having entered inside the devices into spaces 58 above IDTelectrodes 53. Thus, the moisture resistance of elastic wave devices 51,71, and 81 can be improved.

Elastic wave devices 51, 71, and 81 of this exemplary embodiment can beused not only in a ladder type filter but also in other types offilters, such as a double mode SAW (DMS) filter. Further, as shown inFIG. 13, using filter 170 that includes elastic wave devices 1, 51, 71,and 81, semiconductor integrated circuit device 180 connected to filter170, and reproducer 190 connected to semiconductor integrated circuitdevice 180, electronic device 200 can be formed. FIG. 13 is a blockdiagram showing a configuration of an electronic device in accordancewith the exemplary embodiments of the present invention.

This configuration can prevent deterioration of communication quality infilter 170 and electronic device 200.

As described above, the elastic wave device of the present inventionadvantageously improves the yield of the elastic wave device, and can beused in an electronic device, such as a mobile communication device.

1-10. (canceled)
 11. An elastic wave device comprising: a piezoelectricsubstrate; an inter-digital transducer (IDT) electrode disposed on thepiezoelectric substrate; an internal electrode disposed above thepiezoelectric substrate and electrically connected to the IDT electrode;a side wall disposed above the piezoelectric substrate surrounding theIDT electrode; a cover disposed above the side wall so as to cover aspace above the IDT electrode; and a connection electrode disposed abovethe internal electrode, wherein the connection electrode has a firstconnection electrode disposed above the internal electrode, and a secondconnection electrode disposed on the first connection electrode, thesecond connection electrode has a horizontal sectional shape that is anon-circular shape, and the non-circular shape has a curved perimeter.12. The elastic wave device of claim 11, wherein a horizontal sectionalarea of the second connection electrode is smaller than a horizontalsectional area of the first connection electrode.
 13. The elastic wavedevice of claim 11, wherein the non-circular shape is an ellipticalshape.
 14. The elastic wave device of claim 13, wherein the non-circularshape is the elliptical shape such that a ratio of a long axis to ashort axis is equal to or greater than 1.2.
 15. An electronic devicecomprising: the elastic wave device of claim 11; a semiconductorintegrated circuit device connected to the elastic wave device; and areproducer connected to the semiconductor integrated circuit device. 16.An elastic wave device comprising: a piezoelectric substrate; aninter-digital transducer (IDT) electrode disposed on the piezoelectricsubstrate; an internal electrode disposed above the piezoelectricsubstrate and electrically connected to the IDT electrode; a side walldisposed above the piezoelectric substrate surrounding the IDTelectrode; a cover disposed above the side wall so as to cover a spaceabove the IDT electrode; and a connection electrode disposed above theinternal electrode, wherein the connection electrode has a firstconnection electrode disposed above the internal electrode, and a secondconnection electrode disposed on the first connection electrode, whereina horizontal sectional shape of the second connection electrode is anon-circular shape, and wherein the non-circular shape includes astraight part having a length ranging from 35 m to 80 m inclusive in aperipheral edge thereof.
 17. The elastic wave device of claim 16,wherein a horizontal sectional area of the second connection electrodeis smaller than a horizontal sectional area of the first connectionelectrode.
 18. An electronic device comprising: the elastic wave deviceof claim 16; a semiconductor integrated circuit device connected to theelastic wave device; and a reproducer connected to the semiconductorintegrated circuit device.